Semiconductor chip including a plurality of chip areas and fabricating method thereof

ABSTRACT

Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal.

CROSS-REFERENCE TO RELATED APPLICATIONS

A claim for priority under 35 U.S.C. §119 is made to Korean PatentApplication No. 10-2011-0102008 filed Oct. 6, 2011, in the KoreanIntellectual Property Office, the entire contents of which are herebyincorporated by reference.

BACKGROUND

The exemplary embodiments described herein relate to a semiconductorchip and a fabricating method thereof, and more particularly, relate toa semiconductor chip including a plurality of chip areas and afabricating method thereof.

In general, a lithography process may be used to fabricate asemiconductor chip. The lithography process may include an exposeprocess, a development process, and an etching process. A mask may beused at the lithography process. A pattern of an integrated circuit maybe formed by exposing ultraviolet rays to a silicon layer using a mask.

When various types of semiconductor chips are fabricated, separate masksfor the respective semiconductor chips may be required. The reason maybe that IC patterns of the respective semiconductor chips are different.Fabrication cost and time of the mask may take up most of a cost and thetime needed to fabricate a semiconductor chip. In particular, in a casewhere a small amount of test chips are fabricated, fabrication cost andtime of the mask may have a great effect on fabrication cost.

SUMMARY

One aspect of the exemplary embodiments is directed to provide a methodof fabricating a semiconductor chip. The method comprises forming asilicon layer; forming a first layer formed on the silicon layer andincluding a first seal ring surrounding a first chip area and a secondseal ring surrounding a second chip area; and forming a second layerformed on the first layer and including a metal interconnectionconnecting one of the first and second chip areas and an externalterminal.

In example embodiments, the first chip area is smaller in size than thesecond chip area.

In example embodiments, the first chip area is located within the secondchip area.

In example embodiments, the first layer a front end of line (FEOL) layeror a back end of line (BEOL) layer.

In example embodiments, the second layer comprises a global layerconnected with one of the first and second chip areas through a via; abump connected with the global layer and formed to be exposed at anupper surface of the second layer; and a passivation layer formed tocoat the remaining portion of the upper surface of the second layerother than a portion exposing the bump.

In example embodiments, the method further comprises a cutting lineplaced outside the first seal ring to surround the first chip area.

Another aspect of exemplary embodiments is directed to provide asemiconductor chip comprising a silicon layer; a first layer formed onthe silicon layer and including a first seal ring surrounding a firstchip area and a second seal ring surrounding a second chip area; and asecond layer formed on the first layer and including a metalinterconnection connecting one of the first and second chip areas and anexternal terminal.

In example embodiments, the first chip area is smaller in size than thesecond chip area.

In example embodiments, the first chip area is located within the secondchip area.

In example embodiments, the first layer a front end of line (FEOL) layeror a back end of line (BEOL) layer.

In yet another exemplary embodiment, there may be a method offabricating a semiconductor chip, including: forming a silicon layer;forming a first layer on the silicon layer, the first layer including afirst seal ring surrounding a first area and a second seal ringsurrounding a second area; and forming a second layer on the firstlayer, the second layer including a metal interconnection connecting anexternal terminal and one of the first and the second areas.

In an exemplary embodiment, there is a semiconductor chip including: asilicon layer; a first layer formed on the silicon layer, the firstlayer including a first seal ring surrounding a first area and a secondseal ring surrounding a second area; and a second layer formed on thefirst layer, the second layer including a metal interconnectionconnecting an external terminal and one of the first and the secondareas.

In one exemplary embodiment, there is a method of fabricating aplurality of semiconductor chips, including: forming a base layer;forming a first layer on the base layer, the first layer including afirst barrier disposed about a first area and a second barrier disposedabout a second area; forming a second layer on the first layer, thesecond layer including a metal interconnection connecting a terminal andone of the first and the second areas; and separating a portion of thesecond area from the first area along a portion of the first barrier.

BRIEF DESCRIPTION OF THE FIGURES

The above and other aspects and features will become apparent from thefollowing description with reference to the following figures, whereinlike reference numerals refer to like parts throughout the variousfigures unless otherwise specified, and wherein

FIG. 1 is a cross-sectional view illustrating a semiconductor chip.

FIG. 2 is a top view of a FEOL layer or a BEOL layer of a semiconductorchip according to an exemplary embodiment.

FIG. 3 is a cross-sectional view of a FEOL layer or a BEOL layeraccording to an exemplary embodiment.

FIG. 4 is a cross-section view of a first seal ring illustrated in FIG.3.

FIG. 5 is a top view of a FEOL layer or a BEOL layer of a semiconductorchip according to another exemplary embodiment.

FIG. 6 is a top view of a FEOL layer or a BEOL layer of a semiconductorchip according to still another exemplary embodiment.

FIG. 7 is a flowchart illustrating a semiconductor chip fabricatingmethod according to an exemplary embodiment.

DETAILED DESCRIPTION

Embodiments will be described in detail with reference to theaccompanying drawings. The inventive concept, however, may be embodiedin various different forms, and should not be construed as being limitedonly to the illustrated embodiments. Rather, these embodiments areprovided as examples so that this disclosure will be thorough andcomplete, and will fully convey the concept of the inventive concept tothose skilled in the art. Accordingly, known processes, elements, andtechniques are not described with respect to some of the embodiments ofthe inventive concept. Unless otherwise noted, like reference numeralsdenote like elements throughout the attached drawings and writtendescription, and thus descriptions will not be repeated. In thedrawings, the sizes and relative sizes of layers and regions may beexaggerated for clarity.

It will be understood that, although the terms “first”, “second”,“third”, etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another region, layer or section. Thus, a firstelement, component, region, layer or section discussed below could betermed a second element, component, region, layer or section withoutdeparting from the teachings of the inventive concept.

Spatially relative terms, such as “beneath”, “below”, “lower”, “under”,“above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. For example, if the device inthe figures is turned over, elements described as “below” or “beneath”or “under” other elements or features would then be oriented “above” theother elements or features. Thus, the exemplary terms “below” and“under” can encompass both an orientation of above and below. The devicemay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein interpretedaccordingly. In addition, it will also be understood that when a layeris referred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Also, the term “exemplary” is intended to referto an example or illustration.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to”, “coupled to”, or “adjacent to” anotherelement or layer, it can be directly on, connected, coupled, or adjacentto the other element or layer, or intervening elements or layers may bepresent. In contrast, when an element is referred to as being “directlyon,” “directly connected to”, “directly coupled to”, or “immediatelyadjacent to” another element or layer, there are no intervening elementsor layers present.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present specification and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

FIG. 1 is a cross-sectional view illustrating a semiconductor chip.Referring to FIG. 1, a semiconductor chip may include a silicon layer, afront end of line (FEOL) layer, a back end of line (BEOL) layer, and afar BEOL layer.

The silicon layer, or a base layer, may be formed on a semiconductorsubstrate, and may include a source and a drain of a transistor. TheFEOL layer may be formed on the silicon layer, and may include contactsfor the source and drain formed at the silicon layer. The BEOL layer maybe formed on the FEOL layer, and may include a metal interconnection, avia hole, and the like. The far BEOL layer may be formed on the BEOLlayer, and may include a metal interconnection layer for connecting asemiconductor chip package and an external terminal and a passivationlayer, e.g., a protective layer, for coating.

Upon fabricating a semiconductor chip, the silicon layer, the FEOLlayer, the BEOL layer, and the far BEOL layer may be sequentially formedin the aforementioned order. Also, the silicon layer, the FEOL layer,the BEOL layer, and the far BEOL layer can internally include aplurality of layers including a semiconductor layer, a metal layer, oran insulation layer.

FIG. 2 is a top view of a FEOL layer or a BEOL layer of a semiconductorchip according to an exemplary embodiment. Referring to FIG. 2, asemiconductor chip 100 may include a plurality of seal rings at a FEOLlayer or a BEOL layer.

A portion surrounded by each seal ring may form an independent chiparea. For example, a portion surrounded by a first seal ring 141 mayform a first chip area 140, a portion surrounded by a second seal ring131 may form a second chip area 130, a portion surrounded by a thirdseal ring 121 may form a third chip area 120, and a portion surroundedby a fourth seal ring 151 may form a fourth chip area 150. In oneexemplary embodiment, each of the chip areas are non-overlapping in thatan outer boundary of a chip area is defined by one seal ring and aninner boundary of a chip area is defined by another seal ring disposedthat may be disposed inside the one seal ring. In another exemplaryembodiment, the each of the chip areas may be overlapping in that all ofthe area inside one seal ring would be considered to be of one chiparea.

In FIG. 2, there may be illustrated an example that the semiconductorchip 100 includes four seal rings 121, 131, 141, and 151. However, theexemplary embodiments are not limited thereto. For example, thesemiconductor chip 100 can include more or less than four seal rings.The four seal rings 121, 131, 141, and 151, may be disposed to take up atotal area that is less than a size 110 of a mask. As shown in FIG. 2,the seal rings 121, 131, 141, and 151 may or may not be concentricallydisposed. In the present exemplary embodiment, the seal rings 121, 131,141, and 151 are rectangular shaped, but are not necessarily limitedthereto. In another exemplary embodiment, the seal ring may have otherpolygonal shapes such as square, triangle, pentagon, hexagon, etc.,other non-symmetric polygonal shapes, or other non-polygonal shapes, aslong as the shapes are conducive to protecting the areas inside the sealring and to reducing cost and time in manufacturing semiconductor chips.

Integrated circuits may be formed at the chip areas 120, 130, 140, and150 defined by the seal rings 121, 131, 141, and 151, respectively.Portions belonging to the chip areas 120, 130, 140, and 150 may operateindependently from the others of the chip areas 120, 130, 140, and 150.For example, the first chip area 140 may operate independently from theother chip areas 120, 130, and 150, with the exception of the first chiparea 140.

Likewise, the second chip area 130 may operate independently from theother chip areas 120, 140, and 150, with the exception of the secondchip area 130. Likewise, the third chip area 140 may operateindependently from the other chip areas 120, 130, 150 with the exceptionof the third chip area 140, and the fourth chip area 150 may operateindependently from the other chip areas 120, 130, and 140 with theexception of the fourth chip area 150.

One of the chip areas 120, 130, 140, and 150 may be selected as aconstituent element of the semiconductor chip 100. For example, thefirst chip area 120 may be selected as a constituent element of thesemiconductor chip 100 by cutting outside portions of the first chiparea 120. In example embodiments, the second to fourth chip areas 130 to150 may be excluded from an operation of the semiconductor chip 100 bydisconnecting the outside portions of the first chip area 120 from a farBEOL layer (refer to FIG. 1).

Likewise, a portion not corresponding to the second chip area 130 may beexcluded by cutting outside portions of the second chip area 130 orthrough disconnection from the far BEOL layer. In this case, the secondchip area 130 can include the first chip area 120. In exampleembodiments, the second chip area 130 cannot include the first chip area120 by disconnecting the first chip area 120 from the far BEOL layer orcutting the first chip area 120.

With the above-described structure, a semiconductor package may includea plurality of semiconductor chips by forming the plurality ofsemiconductor chips at the first to fourth chip areas 120 to 150,respectively. The semiconductor package may operate as one of thesemiconductor chips formed at the first to fourth chip areas 120 to 150by connecting the far BEOL layer with a required chip area. For example,first to fourth semiconductor chips may be formed at the first to fourthchip areas 120 to 150, respectively. If the first chip area 120 isconnected with the far BEOL layer, the semiconductor chip may operate asa first semiconductor chip. Thus, it is possible to form a plurality ofsemiconductor chips at one semiconductor chip package. A semiconductorchip may operate as one of a plurality of semiconductor chips accordingto a far BEOL layer forming method.

Also, a FEOL layer and a BEOL layer enabling the semiconductor chip 100to operate as first to fourth semiconductor chips may be identical instructure. Only, the semiconductor chip 100 may operate as one of thefirst to fourth chips by changing a structure of the far BEOL layer.Thus, the FEOL and BEOL layers for the first to fourth semiconductorchips may be formed using the same mask. In this case, a mask for thefar BEOL layer may be fabricated separately with respect to the first tofourth semiconductor chips. As a result, although various types ofsemiconductor chips are fabricated, a cost and a time taken to fabricatemay be reduced.

FIG. 3 is a cross-sectional view of a FEOL layer or a BEOL layeraccording to an exemplary embodiment. Referring to FIG. 3, asemiconductor chip 200 may include a first chip area 210 and a secondchip area 220 divided by a first seal ring 230. The first seal ring 230,the first chip area 210, and the second chip area 220 in FIG. 3 maycorrespond to a first seal ring 141, a first chip area 140, and a secondchip area 130 in FIG. 2, respectively.

Each of the first and second chip areas 210 and 220 may include aplurality of layers. In example embodiments, the first chip area 210 mayinclude five layers 211 to 215, and the second chip area 220 may includefive layers 221 to 225. Each of the layers included in each of the firstand second chip areas 210 and 220 may be an insulation layer, a metalinterconnection layer, a via layer, or a silicon layer.

The first chip area 210 may operate as an independent semiconductor chipby forming an integrated circuit at the layers 211 to 215 included inthe first chip area 210. Likewise, the second chip area 220 may operateas an independent semiconductor chip by forming an integrated circuit atthe layers 221 to 225 included in the second chip area 220.

In example embodiments, the second chip area 220 can be formed toinclude the first chip area 210. On the other hand, the second chip area220 can be formed not to include the first chip area 210. In the lattercase, the first chip area 210 may be separated from the second chip area220 by cutting the first seal ring 230. The second chip area 220 may beused for an operation of the semiconductor chip 200 by connecting thesecond chip area 220 with a far BEOL layer (refer to FIG. 1) anddisconnecting the first chip area 210 from the far BEOL layer.

Although not shown in FIG. 3, a second seal ring may be formed outsidethe second chip area 220. That is, the second seal ring may be formed tosurround the second chip area 220.

FIG. 4 is a cross-section view of a first seal ring illustrated in FIG.3. Referring to FIG. 4, a first seal ring 230 may include first, second,third and fourth insulation films 231, 232, 233 and 234, first, secondand third metal layers 236, 237, and 238, first, second and third viaholes 239 a, 239 b, and 239 c, and a device isolation film 235.

The device isolation film 235 may define a seal ring area, and a firstseal ring area and a peripheral semiconductor substrate may be dividedby the device isolation film 235. The first insulation film 231, thefirst metal layer 236, the second insulation film 232, the second metallayer 237, the third insulation film 233, the third metal layer 238, andthe fourth insulation film 234 may be sequentially formed stacked on thedevice isolation film 235.

The first insulation film 231 may include the first via hole 239 aconnected with the first metal layer 236. The second insulation film 232may include the second via hole 239 b connecting the first metal layer236 and the second metal layer 237. The third insulation film 233 mayinclude the third via hole 239 c connecting the second metal layer 237and the third metal layer 238.

The first chip area 210 may be electrically separated from an outer areathrough the above-described vertical structure. Also, it is possible toshield the first chip area 210 from external moisture and impurity. Thefirst chip area 210 may be prevented from being damaged by changes in anexternal environment and an external impact.

In FIGS. 3 and 4, the semiconductor chip 200 may be formed such that thefirst chip area 210 and the second chip area 220 are divided by thefirst seal ring 230. Thus, the semiconductor chip 200 may be used asdifferent semiconductor chips by selecting the first chip area 210 orthe second chip area 220.

For example, if the first chip area 210 is connected with a far BEOLlayer (refer to FIG. 1), the semiconductor chip 200 may be implementedby an integrated circuit formed at the first chip area 210. In thiscase, an outer portion (the remaining portion of the second chip area220 other than the first chip area) of the first chip area 210 may be adummy area. On the other hand, if the second chip area 220 is connectedwith the far BEOL layer, the semiconductor chip 200 may be implementedby an integrated circuit formed at the second chip area 220. In thiscase, the second chip area 220 may include the first chip area 210.

As a result, different types of semiconductor chips may be fabricatedusing the same FEOL and BEOL layers. That is, when a plurality ofsemiconductor chips is fabricated, a cost and a time taken to fabricatea mask used at a semiconductor chip fabricating process may be reduced.

FIG. 5 is a top view of a FEOL layer or a BEOL layer of a semiconductorchip according to another exemplary embodiment. Referring to FIG. 5, asemiconductor chip 300 may include first and second seal rings 321 and311, first and second chip areas 320 and 310, and first and second testkeys 322 and 312. The first test key 322 may be disposed at the firstchip area 320, and the second test key 312 may be disposed at the secondchip area 310. An integrated circuit may be formed at each of the firstand second chip areas 320 and 310. That is, the first and second chipareas 320 and 310 may form independent semiconductor chips,respectively.

The first test key 322 may be a device for testing whether an integratedcircuit formed at the first chip area 320 operates normally. The secondtest key 312 may be a device for testing whether an integrated circuitformed at the second chip area 310 operates normally.

The first and second chip areas 320 and 310 may be electrically isolatedby the first seal ring 321. Thus, the first test key 322 may test anoperation of the first chip area 320 without influence or interferencefrom the second chip area 310. Likewise, the second chip area 310 may beseparated from an outside portion of the second chip area 310 by thesecond seal ring 311. The second test key 312 may test an operation ofthe second chip area 310 without influence or interference from theoutside portion of the second chip area 310.

With the above description, it is possible to test a plurality ofsemiconductor chips formed at a semiconductor chip, independently. InFIG. 5, there may be illustrated an example that two semiconductor chipsare included. However, the exemplary embodiments are not limitedthereto. For example, a semiconductor chip can be formed to internallyinclude two or more different semiconductor chips. Further, the firstand the second seal rings 321 and 311 are concentrically disposed in oneexemplary embodiment. In another exemplary embodiment, the first and thesecond seal rings 321 and 311 are not concentrically disposed.

FIG. 6 is a top view of a FEOL layer or a BEOL layer of a semiconductorchip according to still another exemplary embodiment. Referring to FIG.6, a semiconductor chip 400 may include first and second chip areas 420and 410 and a first seal ring 421. The first and second chip areas 420and 410 and the first seal ring 421 may be substantially identical tothose in FIG. 5 except for the following difference.

As illustrated in FIG. 6, a cutting line 430 may be formed along aboundary of the first seal ring 421. In example embodiments, in a casewhere the semiconductor chip 400 is cut along the cutting line 430, thefirst seal ring 421 may prevent the formation of a crack or preventchipping in the first chip area 420.

The cutting line 430 may be used to separate the first chip area 420from an outside portion of the first chip area 420. The first chip area420 having a small size may be separated to be used as a separatesemiconductor chip by cutting the semiconductor chip 400 along thecutting line 430.

With the above configuration, a required one of a plurality ofsemiconductor chips formed at a semiconductor chip may be cut along aseal ring to be separated. In one exemplary embodiment, the cutting line430 is adjacent to one side of the seal ring as shown in FIG. 6. Inanother exemplary embodiment, the semiconductor chip may be separatedinto multiple semiconductor chips via singulation using one of breaking,shearing, nibbling, punching, routing and sawing methods.

FIG. 7 is a flowchart illustrating a semiconductor chip fabricatingmethod according to an exemplary embodiment.

In operation S110, a silicon layer may be formed on a semiconductorsubstrate. The silicon layer may include a source and a drain of atransistor.

In operation S120, a first layer including first and second seal ringsmay be formed on the silicon layer. The first layer may include a FEOLlayer and a BEOL layer. The FEOL layer may be formed on the siliconlayer, and may include contacts for the source and drain formed at thesilicon layer. The BEOL layer may be formed on the FEOL layer, and mayinclude a metal interconnection, a via hole, and the like.

The first seal ring and the second seal ring may be formed to include aspecific area of a semiconductor chip. The first seal ring and thesecond seal ring may be formed not to be overlapped. In this case, anarea included within the first seal ring may be a first chip area, andan area include within the second seal ring may be a second chip area.

In example embodiments, the first seal ring and the first chip area maybe formed within the second chip area.

In example embodiments, the first or second seal ring may include acutting line for separating of the first chip area or the second chiparea.

The first and second seal rings, the first and second chip areas, andthe cutting line may be as described above.

Herein, two seal rings and chip areas may be exemplarily described.

However, the exemplary embodiments are not limited thereto. For example,two or more seal rings and chip areas can be formed at the first layer.

In operation S130, a second layer for connecting the first layer with anexternal device may be formed on the first layer. The second layer mayinclude a metal interconnection connecting the first or second chip areaformed at the first layer with an external terminal.

In example embodiments, the second layer may be a far BEOL layer.

In example embodiments, the second layer may include a global layerconnected with the first or second chip area through a via, a bumpconnected with the global layer and exposed on an upper surface of thesecond layer, and a passivation layer coating the remaining portion ofthe upper surface of the second layer other than a portion exposing thebump.

Below, an operation S130 will be more fully described. It is assumedthat the first chip area is included within the second chip area.

In operation S131, whether a required semiconductor chip is formed atthe first chip area may be judged. If so, the method proceeds tooperation S132. If not (when a required semiconductor chip is formed atthe second chip area), the method proceeds to operation S133.

In operation S132, a metal interconnection may be formed at the secondlayer to connect the first chip area and an external terminal. At thistime, the second chip area may not be connected with the externalterminal, and may be a dummy area. In example embodiments, the firstchip area may be separated from the dummy area (i.e., the second chiparea) by cutting the semiconductor chip along the first seal ring.

In operation S133, a metal interconnection may be formed at the secondlayer to connect the first or second chip area and an external terminal.At this time, if all integrated circuits formed at the first and secondchip areas are used, the first and second chip areas may be connectedwith an external terminal. On the other hand, if an integrated circuitformed at the first chip area is not used, the first chip area may notbe connected with an external terminal. In this case, the second chiparea may be connected with an external terminal.

As understood from the above description, a plurality of differentsemiconductor chips may be formed within one semiconductor chip. Thus,since FEOL and BEOL layers for various types of semiconductor chips areformed by the same fabricating process, a cost and a time taken tofabricate a mask and a semiconductor chip may be reduced.

As one exemplary embodiment, the first chip area is included within thesecond chip area. The first and second chip areas may be formed not tobe overlapped. In this case, in operation S133, a metal interconnectionmay be formed at the second layer to connect the second chip area and anexternal terminal. On the other hand, as a dummy area, the first chiparea may not be connected with an external terminal.

The FEOL layer, BEOL layer, and far BEOL layer may be the same asdescribed above.

While the inventive concept has been described with reference toexemplary embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the present invention. Therefore, it shouldbe understood that the above embodiments are not limiting, butillustrative.

What is claimed is:
 1. A method of fabricating a semiconductor chip,comprising: forming a silicon layer; forming a first layer on thesilicon layer, the first layer including a first seal ring surrounding afirst area and a second seal ring surrounding a second area; and forminga second layer on the first layer, the second layer including a metalinterconnection for wiring one of the first and the second areas,wherein one of the first area and the second area is selectively chosenby disconnecting the first area or the second area from the secondlayer.
 2. The method of claim 1, wherein the first area is smaller insize than the second area.
 3. The method of claim 1, wherein the firstarea is located within the second area.
 4. The method of claim 1,wherein the first layer is a front end of line (FEOL) layer or a backend of line (BEOL) layer.
 5. The method of claim 1, further comprising:a cutting line placed outside the first seal ring to surround the firstarea.
 6. A semiconductor chip comprising: a silicon layer; a first layerformed on the silicon layer, the first layer including a first seal ringsurrounding a first area and a second seal ring surrounding a secondarea; and a second layer formed on the first layer, the second layerincluding a metal interconnection for wiring one of the first and thesecond areas, wherein one of the first area and the second area isselectively chosen by disconnecting the first area or the second areafrom the second layer.
 7. The semiconductor chip of claim 6, wherein thefirst area is smaller in size than the second area.
 8. The semiconductorchip of claim 7, wherein the first area is located within the secondarea.
 9. The semiconductor chip of claim 6, wherein the first layer is afront end of line (FEOL) layer or a back end of line (BEOL) layer.
 10. Amethod of fabricating a plurality of semiconductor chips, comprising:forming a base layer; forming a first layer on the base layer, the firstlayer including a first barrier disposed about a first area and a secondbarrier disposed about a second area; forming a second layer on thefirst layer, the second layer including a metal interconnection forwiring one of the first and the second areas; and separating a portionof the second area from the first area along a portion of the firstbarrier, wherein one of the first area and the second area isselectively chosen by disconnecting the first area or the second areafrom the second layer.
 11. The method of claim 10, wherein the first andthe second barriers completely surround the respective first and thesecond areas.
 12. The method of claim 11, wherein the first and thesecond barriers are of square or rectangular shapes.
 13. The method ofclaim 12, wherein the first and the second barriers are concentricallydisposed with each other.
 14. The method of claim 13, wherein theseparating comprises one of breaking, shearing, nibbling, punching,routing and sawing along the portion of the first barrier.
 15. Themethod of claim 14, wherein the first layer is a front end of line(FEOL) layer or a back end of line (BEOL) layer.
 16. The method of claim12, wherein the first area of the first barrier and the second area ofthe second barrier do not overlap.